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Preliminary GS8320V18/32/36T-250/225/200/166/150/133
100-Pin TQFP Commercial Temp Industrial Temp Features
* FT pin for user-configurable flow through or pipeline operation * Single Cycle Deselect (SCD) operation * 1.8 V +10%/-10% core power supply * 1.8 V I/O supply * LBO pin for Linear or Interleaved Burst mode * Internal input resistors on mode pins allow floating mode pins * Default to Interleaved Pipeline mode * Byte Write (BW) and/or Global Write (GW) operation * Internal self-timed write cycle * Automatic power-down for portable applications * JEDEC-standard 100-lead TQFP package * Pb-Free 100-lead TQFP package available
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
250 MHz-133 MHz 1.8 V VDD 1.8 V I/O
cycles can be initiated with either ADSP or ADSC inputs. In Burst mode, subsequent burst addresses are generated internally and are controlled by ADV. The burst address counter may be configured to count in either linear or interleave order with the Linear Burst Order (LBO) input. The Burst function need not be used. New addresses can be loaded on every cycle with no degradation of chip performance. Flow Through/Pipeline Reads The function of the Data Output register can be controlled by the user via the FT mode pin (Pin 14). Holding the FT mode pin low places the RAM in Flow Through mode, causing output data to bypass the Data Output Register. Holding FT high places the RAM in Pipeline mode, activating the risingedge-triggered Data Output Register. Byte Write and Global Write Byte write operation is performed by using Byte Write enable (BW) input combined with one or more individual byte write signals (Bx). In addition, Global Write (GW) is available for writing all bytes at one time, regardless of the Byte Write control inputs. Sleep Mode Low power (Sleep mode) is attained through the assertion (High) of the ZZ signal, or by stopping the clock (CK). Memory data is retained during Sleep mode. Core and Interface Voltages The GS8320V18/32/36T operates on a 1.8 V power supply. All input are 1.8 V compatible. Separate output power (VDDQ) pins are used to decouple output noise from the internal circuits and are 1.8 V compatible.
Functional Description
Applications The GS8320V18/32/36T is a 37,748,736-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support. Controls Addresses, data I/Os, chip enables (E1, E2, E3), address burst control inputs (ADSP, ADSC, ADV), and write control inputs (Bx, BW, GW) are synchronous and are controlled by a positive-edge-triggered clock input (CK). Output enable (G) and power down control (ZZ) are asynchronous inputs. Burst
Parameter Synopsis
tKQ tCycle Curr (x18) Curr (x32/x36) tKQ Flow tCycle Through Curr (x18) 2-1-1-1 Curr (x32/x36) Pipeline 3-1-1-1 -250 -225 -200 -166 -150 -133 Unit 2.5 2.7 3.0 3.5 3.8 4.0 ns 4.0 4.4 5.0 6.0 6.6 7.5 ns 285 350 6.5 6.5 205 235 265 320 7.0 7.0 195 225 245 295 7.5 7.5 185 210 220 210 185 mA 260 240 215 mA 8.0 8.0 8.5 8.5 8.5 8.5 ns ns
175 165 155 mA 200 190 175 mA
Rev: 1.02 10/2004
1/24
(c) 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary GS8320V18/32/36T-250/225/200/166/150/133
GS8320V18 100-Pin TQFP Pinout
VDDQ VSS NC NC DQB DQB VSS VDDQ DQB DQB FT VDD NC VSS DQB DQB VDDQ VSS DQB DQB DQPB NC VSS VDDQ NC NC NC
NC NC NC
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 1 80 2 79 3 78 4 77 5 76 6 75 7 74 8 73 9 72 2M x 18 10 71 Top View 11 70 12 69 13 68 14 67 15 66 16 65 17 64 18 63 19 62 20 61 21 60 22 59 23 58 24 57 25 56 26 55 27 54 28 53 29 52 30 51 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
A A E1 E2 NC NC BB BA E3 VDD VSS CK GW BW G ADSC ADSP ADV A A
A NC NC VDDQ VSS NC DQPA DQA DQA VSS VDDQ DQA DQA VSS NC VDD ZZ DQA DQA VDDQ VSS DQA DQA NC NC VSS VDDQ NC NC NC
Rev: 1.02 10/2004
LBO A A A A A1 A0 NC A VSS VDD A A A A A A A A A 2/24
(c) 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary GS8320V18/32/36T-250/225/200/166/150/133
GS8320V32 100-Pin TQFP Pinout
NC DQC DQC VDDQ VSS DQC DQC DQC DQC VSS VDDQ DQC DQC FT VDD NC VSS DQD DQD VDDQ VSS DQD3 DQD DQD DQD VSS VDDQ DQD DQD NC
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 1 80 2 79 3 78 4 77 5 76 6 75 7 74 8 73 9 72 1M x 32 10 71 Top View 11 70 12 69 13 68 14 67 15 66 16 65 17 64 18 63 19 62 20 61 21 60 22 59 23 58 24 57 25 56 26 55 27 54 28 53 29 52 30 51 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
A A E1 E2 BD BC BB BA E3 VDD VSS CK GW BW G ADSC ADSP ADV A A
NC DQB DQB VDDQ VSS DQB DQB DQB DQB VSS VDDQ DQB DQB VSS NC VDD ZZ DQA DQA VDDQ VSS DQA DQA DQA DQA VSS VDDQ DQA DQA NC
Rev: 1.02 10/2004
LBO A A A A A1 A0 NC A VSS VDD A A A A A A A A A 3/24
(c) 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary GS8320V18/32/36T-250/225/200/166/150/133
GS8320V36 100-Pin TQFP Pinout
DQPC DQC DQC VDDQ VSS DQC DQC DQC DQC VSS VDDQ DQC DQC FT VDD NC VSS DQD DQD VDDQ VSS DQD3 DQD DQD DQD VSS VDDQ DQD DQD DQPD
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 1 80 2 79 3 78 4 77 5 76 6 75 7 74 8 73 9 72 1M x 32 10 71 Top View 11 70 12 69 13 68 14 67 15 66 16 65 17 64 18 63 19 62 20 61 21 60 22 59 23 58 24 57 25 56 26 55 27 54 28 53 29 52 30 51 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
A A E1 E2 BD BC BB BA E3 VDD VSS CK GW BW G ADSC ADSP ADV A A
DQPB DQB DQB VDDQ VSS DQB DQB DQB DQB VSS VDDQ DQB DQB VSS NC VDD ZZ DQA DQA VDDQ VSS DQA DQA DQA DQA VSS VDDQ DQA DQA DQPA
Rev: 1.02 10/2004
LBO A A A A A1 A0 NC A VSS VDD A A A A A A A A A 4/24
(c) 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary GS8320V18/32/36T-250/225/200/166/150/133
TQFP Pin Description
Symbol
A0, A1 A DQA DQB1 DQC DQD NC BW BA, BB BC, BD CK GW E1, E3 E2 G ADV ADSP, ADSC ZZ FT LBO VDD VSS VDDQ
Type
I I I/O
Description
Address field LSBs and Address Counter preset Inputs Address Inputs Data Input and Output pins No Connect
I I I I I I I I I I I I I I I I
Byte Write--Writes all enabled bytes; active low Byte Write Enable for DQA, DQB Data I/Os; active low Byte Write Enable for DQC, DQD Data I/Os; active low Clock Input Signal; active high Global Write Enable--Writes all bytes; active low Chip Enable; active low Chip Enable; active high Output Enable; active low Burst address counter advance enable; active low Address Strobe (Processor, Cache Controller); active low Sleep Mode control; active high Flow Through or Pipeline mode; active low Linear Burst Order mode; active low Core power supply I/O and Core Ground Output driver power supply
Rev: 1.02 10/2004
5/24
(c) 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary GS8320V18/32/36T-250/225/200/166/150/133
GS8320V18/32/36 Block Diagram
Register
A0-An
D
Q A0 D0 A1 Q0 D1 Q1 Counter Load A0 A1
A
LBO ADV CK ADSC ADSP GW BW BA
Register
Memory Array
Q D Q D
Register
D BB
Q
36 4
36
Register
D BC
Q Q
Register
D
Register
Q
Register
D
D BD
Q
Register
D
Q
E1 E2 E3
Register
D
Q
Register
D
Q
FT G Power Down Control
ZZ
1
DQx1-DQx9
Note: Only x36 version shown for simplicity.
Rev: 1.02 10/2004
6/24
(c) 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary GS8320V18/32/36T-250/225/200/166/150/133
Mode Pin Functions Mode Name
Burst Order Control Output Register Control Power Down Control
Pin Name
LBO FT ZZ
State
L H L H or NC L or NC H
Function
Linear Burst Interleaved Burst Flow Through Pipeline Active Standby, IDD = ISB
Note: There is a pull-up device on the FT pin and a pull-down device on the ZZ pin, so this input pin can be unconnected and the chip will operate in the default states as specified in the above tables. Burst Counter Sequences
Linear Burst Sequence A[1:0] A[1:0] A[1:0] A[1:0]
1st address 2nd address 3rd address 4th address 00 01 10 11 01 10 11 00 10 11 00 01 11 00 01 10
Interleaved Burst Sequence A[1:0] A[1:0] A[1:0] A[1:0]
1st address 2nd address 3rd address 4th address 00 01 10 11 01 00 11 10 10 11 00 01 11 10 01 00
Note: The burst counter wraps to initial state on the 5th clock.
Note: The burst counter wraps to initial state on the 5th clock.
BPR 1999.05.18
Rev: 1.02 10/2004
7/24
(c) 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary GS8320V18/32/36T-250/225/200/166/150/133
Byte Write Truth Table Function
Read Read Write byte a Write byte b Write byte c Write byte d Write all bytes
GW
H H H H H H H
BW
H L L L L L L
BA
X H L H H H L
BB
X H H L H H L
BC
X H H H L H L
BD
X H H H H L L
Notes
1 1 2, 3 2, 3 2, 3, 4 2, 3, 4 2, 3, 4
Write all bytes L X X X X X Notes: 1. All byte outputs are active in read cycles regardless of the state of Byte Write Enable inputs. 2. Byte Write Enable inputs BA, BB, BC and/or BD may be used in any combination with BW to write single or multiple bytes. 3. All byte I/Os remain High-Z during all write operations regardless of the state of Byte Write Enable inputs. 4. Bytes "C" and "D" are only available on the x32 and x36 versions.
Rev: 1.02 10/2004
8/24
(c) 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary GS8320V18/32/36T-250/225/200/166/150/133
Synchronous Truth Table Operation
Deselect Cycle, Power Down Deselect Cycle, Power Down Deselect Cycle, Power Down Read Cycle, Begin Burst Read Cycle, Begin Burst Write Cycle, Begin Burst Read Cycle, Continue Burst Read Cycle, Continue Burst Write Cycle, Continue Burst Write Cycle, Continue Burst Read Cycle, Suspend Burst Read Cycle, Suspend Burst Write Cycle, Suspend Burst
Address Used
None None None External External External Next Next Next Next Current Current Current
State Diagram Key5
X X X R R W CR CR CW CW
E1
H L L L L L X H X H X H X
E2
X F F T T T X X X X X X X
ADSP ADSC
X L H L H H H X H X H X H L X L X L L H H H H H H H
ADV
X X X X X X L L L L H H H
W3
X X X X F T F F T T F F T
DQ4
High-Z High-Z High-Z Q Q D Q Q D D Q Q D
Write Cycle, Suspend Burst Current H X X H H T D Notes: 1. X = Don't Care, H = High, L = Low 2. E = T (True) if E2 = 1 and E3 = 0; E = F (False) if E2 = 0 or E3 = 1 3. W = T (True) and F (False) is defined in the Byte Write Truth Table preceding. 4. G is an asynchronous input. G can be driven high at any time to disable active output drivers. G low can only enable active drivers (shown as "Q" in the Truth Table above). 5. All input combinations shown above are tested and supported. Input combinations shown in gray boxes need not be used to accomplish basic synchronous or synchronous burst operations and may be avoided for simplicity. 6. Tying ADSP high and ADSC low allows simple non-burst synchronous operations. See BOLD items above. 7. Tying ADSP high and ADV low while using ADSC to load new addresses allows simple burst operations. See ITALIC items above.
Rev: 1.02 10/2004
9/24
(c) 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary GS8320V18/32/36T-250/225/200/166/150/133
Simplified State Diagram
X
Deselect W W Simple Synchronous Operation R R
X CW
First Write
R CR
First Read
X CR
Simple Burst Synchronous Operation
W R X Burst Write CR CW
R
Burst Read
X
CR
Notes: 1. The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low. 2. The upper portion of the diagram assumes active use of only the Enable (E1, E2, and E3) and Write (BA, BB, BC, BD, BW, and GW) control inputs, and that ADSP is tied high and ADSC is tied low. 3. The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs, and assumes ADSP is tied high and ADV is tied low.
Rev: 1.02 10/2004
10/24
(c) 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary GS8320V18/32/36T-250/225/200/166/150/133
Simplified State Diagram with G
X
Deselect W W X W CW R R
First Write
R CR
First Read
X CR
CW
W X Burst Write R CR W CW
R X
Burst Read
CW
CR
Notes: 1. The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G. 2. Use of "Dummy Reads" (Read Cycles with G High) may be used to make the transition from Read cycles to Write cycles without passing through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles. 3. Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM's drivers off and for incoming data to meet Data Input Set Up Time.
Rev: 1.02 10/2004
11/24
(c) 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary GS8320V18/32/36T-250/225/200/166/150/133
Absolute Maximum Ratings
(All voltages reference to VSS)
Symbol
VDD VDDQ VI/O VIN IIN IOUT PD TSTG TBIAS
Note:
Description
Voltage on VDD Pins Voltage in VDDQ Pins Voltage on I/O Pins Voltage on Other Input Pins Input Current on Any Pin Output Current on Any I/O Pin Package Power Dissipation Storage Temperature Temperature Under Bias
Value
-0.5 to 3.6 -0.5 to 3.6 -0.5 to VDDQ +0.5 ( 3.6 V max.) -0.5 to VDD +0.5 ( 3.6 V max.) +/-20 +/-20 1.5 -55 to 125 -55 to 125
Unit
V V V V mA mA W
oC oC
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of this component.
Power Supply Voltage Ranges Parameter
1.8 V Supply Voltage 1.8 V VDDQ I/O Supply Voltage
Symbol
VDD1 VDDQ1
Min.
1.6 1.6
Typ.
1.8 1.8
Max.
2.0 2.0
Unit
V V
Notes
Notes: 1. The part numbers of Industrial Temperature Range versions end the character "I". Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device. 2. Input Under/overshoot voltage must be -2 V > Vi < VDDn+2 V not to exceed 3.6 V maximum, with a pulse width not to exceed 20% tKC.
Rev: 1.02 10/2004
12/24
(c) 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary GS8320V18/32/36T-250/225/200/166/150/133
Logic Levels Parameter
VDD Input High Voltage VDD Input Low Voltage VDDQ I/O Input High Voltage VDDQ I/O Input Low Voltage
Symbol
VIH VIL VIHQ VILQ
Min.
0.6*VDD -0.3 0.6*VDD -0.3
Typ.
-- -- -- --
Max.
VDD + 0.3 0.3*VDD VDDQ + 0.3 0.3*VDD
Unit
V V V V
Notes
1 1 1,3 1,3
Notes: 1. The part numbers of Industrial Temperature Range versions end the character "I". Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device. 2. Input Under/overshoot voltage must be -2 V > Vi < VDDn+2 V not to exceed 3.6 V maximum, with a pulse width not to exceed 20% tKC. 3. VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
Undershoot Measurement and Timing
VIH
Overshoot Measurement and Timing
20% tKC VDD + 2.0 V
VSS 50% VSS - 2.0 V 20% tKC
50% VDD
VIL
Capacitance
(TA = 25oC, f = 1 MHZ, VDD = 2.5 V)
Parameter
Input Capacitance Input/Output Capacitance Note: These parameters are sample tested.
Symbol
CIN CI/O
Test conditions
VIN = 0 V VOUT = 0 V
Typ.
4 6
Max.
5 7
Unit
pF pF
Rev: 1.02 10/2004
13/24
(c) 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary GS8320V18/32/36T-250/225/200/166/150/133
AC Test Conditions Parameter
Input high level Input low level Input slew rate Input reference level Output reference level Output load
Conditions
VDD - 0.2 V 0.2 V 1 V/ns VDD/2 VDDQ/2 Fig. 1
Notes: 1. Include scope and jig capacitance. 2. Test conditions as specified with output loading as shown in Fig. 1 unless otherwise noted. 3. Device is deselected as defined by the Truth Table.
Output Load 1 DQ 50 VDDQ/2 * Distributed Test Jig Capacitance 30pF*
DC Electrical Characteristics Parameter
Input Leakage Current (except mode pins) ZZ Input Current FT Input Current Output Leakage Current Output High Voltage Output Low Voltage
Symbol
IIL IIN1 IIN2 IOL VOH1 VOL1
Test Conditions
VIN = 0 to VDD VDD VIN VIH 0 V VIN VIH VDD VIN VIL 0 V VIN VIL Output Disable, VOUT = 0 to VDD IOH = -4 mA, VDDQ = 1.6 V IOL = 4 mA, VDD = 1.6 V
Min
-1 uA -1 uA -1 uA -100 uA -1 uA -1 uA VDDQ - 0.4 V --
Max
1 uA 1 uA 100 uA 1 uA 1 uA 1 uA -- 0.4 V
Rev: 1.02 10/2004
14/24
(c) 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Operating Currents
-250 Mode IDD IDDQ IDD IDDQ IDD IDDQ IDD IDDQ ISB 60 60 100 85 100 85 100 80 95 115 95 110 90 105 80 60 80 60 80 60 85 80 80 60 80 60 80 60 ISB IDD IDD 80 80 100 95 190 15 200 15 180 15 190 15 170 15 180 15 160 15 170 15 150 15 60 60 85 75 260 25 280 25 240 25 260 25 225 20 245 20 200 20 220 20 190 20 210 20 160 15 80 80 100 90 210 25 220 25 200 25 210 25 190 20 200 20 180 20 190 20 170 20 180 20 160 15 170 15 140 15 60 60 80 70 300 50 320 50 275 45 295 45 255 40 275 40 225 35 245 35 210 30 230 30 190 25 Symbol 0 to 70C -40 to 85C Unit 210 25 170 15 190 15 150 15 80 80 95 85
mA mA mA mA mA mA mA mA
-225 0 to 70C -40 to 85C -40 to 85C -40 to 85C -40 to 85C -40 to 85C 0 to 70C 0 to 70C 0 to 70C 0 to 70C
-200
-166
-150
-133
Rev: 1.02 10/2004 (x32/ x36) Flow Through Pipeline (x18) Flow Through Pipeline -- Flow Through Pipeline -- Flow Through Pipeline
Parameter
Test Conditions
Operating Current
Device Selected; All other inputs VIH or VIL Output open
15/24
Standby Current
ZZ VDD - 0.2 V
Deselect Current
Device Deselected; All other inputs VIH or VIL
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Notes: 1. IDD and IDDQ apply to any combination of VDD and VDDQ operation. 2. All parameters listed are worst case scenario.
Preliminary GS8320V18/32/36T-250/225/200/166/150/133
(c) 2003, GSI Technology
Preliminary GS8320V18/32/36T-250/225/200/166/150/133
AC Electrical Characteristics
Parameter Clock Cycle Time Clock to Output Valid Pipeline Clock to Output Invalid Clock to Output in Low-Z Setup time Hold time Clock Cycle Time Clock to Output Valid Flow Through Clock to Output Invalid Clock to Output in Low-Z Setup time Hold time Clock HIGH Time Clock LOW Time Clock to Output in High-Z G to Output Valid G to output in Low-Z G to output in High-Z ZZ setup time ZZ hold time ZZ recovery Symbol tKC tKQ tKQX tLZ tS tH tKC tKQ tKQX tLZ1 tS tH tKH tKL tHZ1 tOE tOLZ1 tOHZ1 tZZS2 tZZH2 tZZR
1
-250 Min 4.0 -- 1.5 1.5 1.2 0.2 6.5 -- 3.0 3.0 1.5 0.5 1.3 1.5 1.5 -- 0 -- 5 1 20 Max -- 2.5 -- -- -- -- -- 6.5 -- -- -- -- -- -- 2.5 2.5 -- 2.5 -- -- --
-225 Min 4.4 -- 1.5 1.5 1.3 0.3 7.0 -- 3.0 3.0 1.5 0.5 1.3 1.5 1.5 -- 0 -- 5 1 20 Max -- 2.7 -- -- -- -- -- 7.0 -- -- -- -- -- -- 2.7 2.7 -- 2.7 -- -- --
-200 Min 5.0 -- 1.5 1.5 1.4 0.4 7.5 -- 3.0 3.0 1.5 0.5 1.3 1.5 1.5 -- 0 -- 5 1 20 Max -- 3.0 -- -- -- -- -- 7.5 -- -- -- -- -- -- 3.0 3.0 -- 3.0 -- -- --
-166 Min 6.0 -- 1.5 1.5 1.5 0.5 8.0 -- 3.0 3.0 1.5 0.5 1.3 1.5 1.5 -- 0 -- 5 1 20 Max -- 3.5 -- -- -- -- -- 8.0 -- -- -- -- -- -- 3.0 3.5 -- 3.0 -- -- --
-150 Min 6.7 -- 1.5 1.5 1.5 0.5 8.5 -- 3.0 3.0 1.5 0.5 1.5 1.7 1.5 -- 0 -- 5 1 20 Max -- 3.8 -- -- -- -- -- 8.5 -- -- -- -- -- -- 3.0 3.8 -- 3.0 -- -- --
-133 Min 7.5 -- 1.5 1.5 1.5 0.5 8.5 -- 3.0 3.0 1.5 0.5 1.7 2 1.5 -- 0 -- 5 1 20 Max -- 4.0 -- -- -- -- -- 8.5 -- -- -- -- -- -- 3.0 4.0 -- 3.0 -- -- --
Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
Notes: 1. These parameters are sampled and are not 100% tested. 2. ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold times as specified above.
Rev: 1.02 10/2004
16/24
(c) 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary GS8320V18/32/36T-250/225/200/166/150/133
Pipeline Mode Timing
Begin
Read A
Cont
Cont
Deselect Write B Single Write tKL tKH tKC
Read C
Read C+1 Read C+2 Read C+3 Cont Burst Read
Deselect
Single Read
CK ADSP tS tH ADSC tS ADV tS tH A0-An
A B C ADSC initiated read
tH
tS GW tS BW tH tS Ba-Bd tS tH E1 tS tH E2 tS tH E3 G tS tOE DQa-DQd tOHZ
Q(A) D(B) E2 and E3 only sampled with ADSP and ADSC E1 masks ADSP Deselected with E1
tH
tKQ tH tLZ
Q(C) Q(C+1) Q(C+2)
tKQX tHZ
Q(C+3)
Rev: 1.02 10/2004
17/24
(c) 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary GS8320V18/32/36T-250/225/200/166/150/133
Flow Through Mode Timing
Begin
Read A
Cont tKL tKH
Cont tKC
Write B
Read C
Read C+1 Read C+2 Read C+3 Read C
Cont
Deselect
CK ADSP tS tH ADSC tS tH ADV tS tH A0-An
A B C Fixed High
tS tH ADSC initiated read
tS tH GW tS tH BW tS tH Ba-Bd tS tH E1 tS tH E2 tS tH E3 G tH tS tOE DQa-DQd
Q(A) Deselected with E1
E2 and E3 only sampled with ADSC
tOHZ
D(B)
tKQ tLZ
Q(C) Q(C+1) Q(C+2) Q(C+3) Q(C)
tHZ tKQX
Rev: 1.02 10/2004
18/24
(c) 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary GS8320V18/32/36T-250/225/200/166/150/133
Sleep Mode
During normal operation, ZZ must be pulled low, either by the user or by its internal pull down resistor. When ZZ is pulled high, the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to low, the SRAM operates normally after 2 cycles of wake up time. Sleep mode is a low current, power-down mode in which the device is deselected and current is reduced to ISB2. The duration of Sleep mode is dictated by the length of time the ZZ is in a High state. After entering Sleep mode, all inputs except ZZ become disabled and all outputs go to High-Z The ZZ pin is an asynchronous, active high input that causes the device to enter Sleep mode. When the ZZ pin is driven high, ISB2 is guaranteed after the time tZZI is met. Because ZZ is an asynchronous input, pending operations or operations in progress may not be properly completed if ZZ is asserted. Therefore, Sleep mode must not be initiated until valid pending operations are completed. Similarly, when exiting Sleep mode during tZZR, only a Deselect or Read commands may be applied while the SRAM is recovering from Sleep mode.
Sleep Mode Timing Diagram
tKH tKC CK Setup Hold ADSP ADSC tZZR tZZS ZZ tZZH tKL
Rev: 1.02 10/2004
19/24
(c) 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary GS8320V18/32/36T-250/225/200/166/150/133
TQFP Package Drawing (Package T) L Symbol
A1 A2 b c D D1 E E1 e L L1 Y
c Pin 1
Description
Standoff Body Thickness Lead Width Lead Thickness Terminal Dimension Package Body Terminal Dimension Package Body Lead Pitch Foot Length Lead Length Coplanarity Lead Angle
Min. Nom. Max
0.05 1.35 0.20 0.09 21.9 19.9 15.9 13.9 -- 0.45 -- 0.10 1.40 0.30 -- 22.0 20.0 16.0 14.0 0.65 0.60 1.00 0.15 1.45 0.40 0.20 22.1 20.1 16.1 14.1 -- 0.75 -- 0.10
L1
e b
D D1
A1
Y
A2
E1 E
0
--
7
Notes: 1. All dimensions are in millimeters (mm). 2. Package width and length do not include mold protrusion.
Rev: 1.02 10/2004
20/24
(c) 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary GS8320V18/32/36T-250/225/200/166/150/133
Ordering Information for GSI Synchronous Burst RAMs Org
2M x 18 2M x 18 2M x 18 2M x 18 2M x 18 2M x 18 1M x 32 1M x 32 1M x 32 1M x 32 1M x 32 1M x 32 1M x 36 1M x 36 1M x 36 1M x 36 1M x 36 1M x 36 2M x 18 2M x 18 2M x 18 2M x 18 2M x 18 2M x 18 1M x 32 1M x 32 1M x 32 1M x 32
Part Number1
GS8320V18T-250 GS8320V18T-225 GS8320V18T-200 GS8320V18T-166 GS8320V18T-150 GS8320V18T-133 GS8320V32T-250 GS8320V32T-225 GS8320V32T-200 GS8320V32T-166 GS8320V32T-150 GS8320V32T-133 GS8320V36T-250 GS8320V36T-225 GS8320V36T-200 GS8320V36T-166 GS8320V36T-150 GS8320V36T-133 GS8320V18T-250I GS8320V18T-225I GS8320V18T-200I GS8320V18T-166I GS8320V18T-150I GS8320V18T-133I GS8320V32T-250I GS8320V32T-225I GS8320V32T-200I GS8320V32T-166I
Type
Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through
Package
TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP
Speed2 (MHz/ns)
250/6.5 225/7 200/7.5 166/8 150/8.5 133/8.5 250/6.5 225/7 200/7.5 166/8 150/8.5 133/8.5 250/6.5 225/7 200/7.5 166/8 150/8.5 133/8.5 250/6.5 225/7 200/7.5 166/8 150/8.5 133/8.5 250/6.5 225/7 200/7.5 166/8
TA3
C C C C C C C C C C C C C C C C C C I I I I I I I I I I
Status
1M x 32 GS8320V32T-150I Pipeline/Flow Through TQFP 150/8.5 I Notes: 1. Customers requiring delivery in Tape and Reel should add the character "T" to the end of the part number. Example: GS8320V18T-150IT. 2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each device is Pipeline/Flow Through mode-selectable by the user. 3. TA = C = Commercial Temperature Range. TA = I = Industrial Temperature Range. 4. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.
Rev: 1.02 10/2004
21/24
(c) 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary GS8320V18/32/36T-250/225/200/166/150/133
Ordering Information for GSI Synchronous Burst RAMs Org
1M x 32 1M x 36 1M x 36 1M x 36 1M x 36 1M x 36 1M x 36 2M x 18 2M x 18 2M x 18 2M x 18 2M x 18 2M x 18 1M x 32 1M x 32 1M x 32 1M x 32 1M x 32 1M x 32 1M x 36 1M x 36 1M x 36 1M x 36 1M x 36 1M x 36 2M x 18 2M x 18 2M x 18 2M x 18 2M x 18
Part Number1
GS8320V32T-133I GS8320V36T-250I GS8320V36T-225I GS8320V36T-200I GS8320V36T-166I GS8320V36T-150I GS8320V36T-133I GS8320V18GT-250 GS8320V18GT-225 GS8320V18GT-200 GS8320V18GT-166 GS8320V18GT-150 GS8320V18GT-133 GS8320V32GT-250 GS8320V32GT-225 GS8320V32GT-200 GS8320V32GT-166 GS8320V32GT-150 GS8320V32GT-133 GS8320V36GT-250 GS8320V36GT-225 GS8320V36GT-200 GS8320V36GT-166 GS8320V36GT-150 GS8320V36GT-133 GS8320V18GT-250I GS8320V18GT-225I GS8320V18GT-200I GS8320V18GT-166I GS8320V18GT-150I
Type
Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through
Package
TQFP TQFP TQFP TQFP TQFP TQFP TQFP Pb-free TQFP Pb-free TQFP Pb-free TQFP Pb-free TQFP Pb-free TQFP Pb-free TQFP Pb-free TQFP Pb-free TQFP Pb-free TQFP Pb-free TQFP Pb-free TQFP Pb-free TQFP Pb-free TQFP Pb-free TQFP Pb-free TQFP Pb-free TQFP Pb-free TQFP Pb-free TQFP Pb-free TQFP Pb-free TQFP Pb-free TQFP Pb-free TQFP Pb-free TQFP
Speed2 (MHz/ns)
133/8.5 250/6.5 225/7 200/7.5 166/8 150/8.5 133/8.5 250/6.5 225/7 200/7.5 166/8 150/8.5 133/8.5 250/6.5 225/7 200/7.5 166/8 150/8.5 133/8.5 250/6.5 225/7 200/7.5 166/8 150/8.5 133/8.5 250/6.5 225/7 200/7.5 166/8 150/8.5
TA3
I I I I I I I C C C C C C C C C C C C C C C C C C I I I I I
Status
2M x 18 GS8320V18GT-133I Pipeline/Flow Through Pb-free TQFP 133/8.5 I Notes: 1. Customers requiring delivery in Tape and Reel should add the character "T" to the end of the part number. Example: GS8320V18T-150IT. 2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each device is Pipeline/Flow Through mode-selectable by the user. 3. TA = C = Commercial Temperature Range. TA = I = Industrial Temperature Range. 4. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.
Rev: 1.02 10/2004
22/24
(c) 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary GS8320V18/32/36T-250/225/200/166/150/133
Ordering Information for GSI Synchronous Burst RAMs Org
1M x 32 1M x 32 1M x 32 1M x 32 1M x 32 1M x 32 1M x 36 1M x 36 1M x 36 1M x 36 1M x 36
Part Number1
GS8320V32GT-250I GS8320V32GT-225I GS8320V32GT-200I GS8320V32GT-166I GS8320V32GT-150I GS8320V32GT-133I GS8320V36GT-250I GS8320V36GT-225I GS8320V36GT-200I GS8320V36GT-166I GS8320V36GT-150I
Type
Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through
Package
Pb-free TQFP Pb-free TQFP Pb-free TQFP Pb-free TQFP Pb-free TQFP Pb-free TQFP Pb-free TQFP Pb-free TQFP Pb-free TQFP Pb-free TQFP Pb-free TQFP
Speed2 (MHz/ns)
250/6.5 225/7 200/7.5 166/8 150/8.5 133/8.5 250/6.5 225/7 200/7.5 166/8 150/8.5
TA3
I I I I I I I I I I I
Status
1M x 36 GS8320V36GT-133I Pipeline/Flow Through Pb-free TQFP 133/8.5 I Notes: 1. Customers requiring delivery in Tape and Reel should add the character "T" to the end of the part number. Example: GS8320V18T-150IT. 2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each device is Pipeline/Flow Through mode-selectable by the user. 3. TA = C = Commercial Temperature Range. TA = I = Industrial Temperature Range. 4. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.
Rev: 1.02 10/2004
23/24
(c) 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary GS8320V18/32/36T-250/225/200/166/150/133
36Mb Sync SRAM Datasheet Revision History DS/DateRev. Code: Old; New
8320V18_r1 8320V18_r1; 8320V18_r1_01 8320V18_r1_01; 8320V18_r1_02 Content Content/Format
Types of Changes Format or Content
Page;Revisions;Reason
* Creation of new datasheet * Removed all address pin numbers except 0 and 1 * Updated AC Characteristics table with new numbers * Updated format * Added Pb-free information for TQFP package
Rev: 1.02 10/2004
24/24
(c) 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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